Temperature effects and accuracy of MOS radiation dosimeters
نویسندگان
چکیده
-The influence of the irradiation dose on the parameters which control the temperature sensitivity of thick oxide p-MOS ionising radiation dosimeters is investigated. The temperature sensitivity of the threshold voltage, the carrier mobility and the minimum temperature coefficient current appear to be dose-dependent contrary to what is generally considered. The consequences on the dose measurement accuracy of the dosimeter is discussed with respect to the measurement procedure. Key-Words : MOS radiation dosimeter, ionising radiation, temperature effects, accuracy
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